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this is information on a product in full production. june 2012 doc id 17152 rev 3 1/13 13 STS12N3LLH5 n-channel 30 v, 0.0068 , 12 a, so-8 stripfet? v power mosfet datasheet ? production data features r ds(on) * q g industry benchmark extremely low on-resistance r ds(on) very low switching gate charge high avalanche ruggedness low gate drive power losses application switching applications description this device is an n-channel power mosfet developed using stmicroelectronics? stripfet?v technology. the device has been optimized to achieve very low on-state resistance, contributing to an fom that is among the best in its class. figure 1. internal schematic diagram type v dss r ds(on) max i d STS12N3LLH5 30 v < 0.0075 12 a (1) 1. the value is rated according r thj-pcb so-8 1 4 5 8 table 1. device summary order code marking package packaging STS12N3LLH5 12d3l so-8 tape and reel www.st.com
contents STS12N3LLH5 2/13 doc id 17152 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 STS12N3LLH5 electrical ratings doc id 17152 rev 3 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v gs gate-source voltage +22/-20 v i d (1) 1. the value is rated according r thj-pcb drain current (continuous) at t c = 25 c 12 a i d (1) drain current (continuous) at t c =100 c 8.75 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 48 a p tot (2) total dissipation at t c = 25 c 2.7 w derating factor 0.02 w/c t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal resistance symbol parameter value unit r thj-pcb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10sec thermal resistance junction-ambient 47 c/w electrical characteristics STS12N3LLH5 4/13 doc id 17152 rev 3 2 electrical characteristics (t case =25c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds =max rating @125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = +22/-20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 6 a v gs = 4.5 v, i d = 6 a 0.0068 0.0084 0.0075 0.0092 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f=1 mhz, v gs =0 - 1290 240 32 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =15 v, i d = 12 a v gs = 4.5 v figure 14 - 8 3.6 3.4 nc nc nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd =15 v, i d = 6 a, r g =4.7 , v gs =10 v figure 13 - 8.6 11.2 32.4 6 - ns ns ns ns STS12N3LLH5 electrical characteristics doc id 17152 rev 3 5/13 table 7. source drain diode symbol parameter test conditions min typ. max unit i sd source-drain current - 12 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 48 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd = 12 a, v gs =0 - 1.1 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 12 a, di/dt = 100 a/s, v dd = 25 v, tj=150 c - 22 15 1.4 ns nc a electrical characteristics STS12N3LLH5 6/13 doc id 17152 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on-resistance ) $ 6 $ 3 6 ! / p e r a t i o n i n t h i s a r e a i s , i m i t e d b y m a x 2 $ 3 o n m s s m s 4 j ? # 4 c ? # 3 i n g l e p u l s e ! - v ) $ 6 $ 3 6 ! 6 6 6 6 ' 3 6 6 ! - v ) $ 6 $ 3 6 ! 6 ' 3 6 ! - v " 6 $ 3 3 4 * ? # n o r m ! - v 2 $ 3 o n ) $ ! / h m 6 ' 3 6 ! - v STS12N3LLH5 electrical characteristics doc id 17152 rev 3 7/13 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics 6 ' 3 1 g n # 6 6 $ $ 6 ) $ ! ! - v # 6 $ 3 6 p & |